Performance of CsPbBr 3 /HfO 2 /Si: Performance‐Enhanced CsPbBr 3 /HfO 2 /Si Heterostructure Optoelectronics through the Tunneling Effect (Adv. Mater. Interfaces 11/2021)
نویسندگان
چکیده
The tunneling effect through a thin HfO2 layer enables CsPbBr3/HfO2/Si heterostructure photodetector with enhanced optoelectronic performance. In article number 2100279, Yu Zhang and co-workers demonstrate that the performance of device can be modulated both Vds Vgs, providing flexibility for different applications.
منابع مشابه
Analysis of ultra-thin HfO(2)/SiON/Si(001): comparison of three different techniques.
Composition depth profiling of HfO(2) (2.5 nm)/SiON (1.6 nm)/Si(001) was performed by three diffetent analytical techniques: high-resolution Rutherford backscattering spectroscopy (HRBS), angle-resolved X-ray photoelectron spectroscopy (AR-XPS) and high-resolution elastic recoil detection (HR-ERD). By comparing these results we found the following: (1) HRBS generally provides accurate depth pro...
متن کاملComparison of n-type Gd(2)O(3) and Gd-doped HfO(2).
Gd(2)O(3) and Gd-doped HfO(2) films were deposited on p-type silicon substrates in a reducing atmosphere. Gd 4f photoexcitation peaks at roughly 7 and 5 eV below the valence band maximum have been identified using the resonant photoemission of Gd(2)O(3) and Gd-doped HfO(2) films, respectively. In the case of Gd(2)O(3), strong hybridization with the O 2p band is demonstrated, and there is eviden...
متن کاملSi nanoparticle interfaces in Si / SiO 2 solar cell materials
All material supplied via Aaltodoc is protected by copyright and other intellectual property rights, and duplication or sale of all or part of any of the repository collections is not permitted, except that material may be duplicated by you for your research use or educational purposes in electronic or print form. You must obtain permission for any other use. Electronic or print copies may not ...
متن کاملIonization energy measurements and spectroscopy of HfO and HfO+.
Rotationally resolved spectra for the HfO(+) cation have been recorded using the pulsed field ionization zero electron kinetic energy (PFI-ZEKE) technique. Resonant excitation of the F(0(+))<--X (1)Sigma(+) band system of HfO was used as an intermediate level providing molecule and rovibrational state selectivity in the ionization process. The ionization energy (IE) of HfO, derived from the PFI...
متن کاملThe chemisorption of H2C[Si(CH3)3]2 and Si6(CH3)12 on Si(100) surfaces
The chemisorption of bis~trimethylsilyl!methane ~BTM, CH2@Si~CH3!3#2! and dodecamethylcyclohexasilane ~DCS, Si6~CH3!12! on clean Si~100! surfaces has been studied by C 1s core-level and valence-band photoemission spectroscopy. Our model for the deposition of carbon by BTM involves decomposition into a –CH2Si~CH3!3 surface moiety for room-temperature adsorption, which further decomposes upon ann...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Advanced Materials Interfaces
سال: 2021
ISSN: ['2196-7350']
DOI: https://doi.org/10.1002/admi.202170062